TELEMECANIQUE ATV452VD37
全球SiC產(chǎn)業(yè)格局呈現(xiàn)美國、歐洲、日本三足鼎立態(tài)勢(shì)。其中美國全球獨(dú)大，全球SiC產(chǎn)量的70%~80%來自美國公司，典型公司是Cree、Ⅱ-Ⅵ；歐洲擁有完整的SiC襯底、外延、器件以及應(yīng)用產(chǎn)業(yè)鏈，典型公司是英飛凌、意法半導(dǎo)體等；日本是設(shè)備和模塊開發(fā)方面的領(lǐng)先者，典型公司是羅姆半導(dǎo)體、三菱電機(jī)、富士電機(jī)等。
國內(nèi)企業(yè)在SiC方面也多有布局。SiC襯底方面，天科合達(dá)、山東天岳、同光晶體等均能供應(yīng)3英寸~6英寸的單晶襯底。SiC外延片方面，廈門瀚天天成與東莞天域生產(chǎn)3英寸~6英寸SiC外延片。SiC器件IDM方面，中電科55所是國內(nèi)少數(shù)從4-6寸碳化硅外延生長、芯片設(shè)計(jì)與制造、模塊封裝領(lǐng)域?qū)崿F(xiàn)全產(chǎn)業(yè)鏈的企業(yè)單位，其6英寸碳化硅中試線已投入運(yùn)行，旗下的控股子公司揚(yáng)州國揚(yáng)電子為“寬禁帶電力電子器件國家重點(diǎn)實(shí)驗(yàn)室”的重要實(shí)體單位，專業(yè)從事以碳化硅為代表的新型半導(dǎo)體功率模塊的研制和批產(chǎn)，現(xiàn)有一條于2017年投產(chǎn)、產(chǎn)能50萬只/年的模塊工藝線。
泰科天潤已經(jīng)量產(chǎn)SiCSBD，產(chǎn)品涵蓋600V/5A～50A、1200V/5A～50A和1700V/10A系列。深圳基本半導(dǎo)體擁有的3DSiC技術(shù)，推出的1200VSiCMOSFET性能達(dá)到業(yè)界領(lǐng)先水平。SiC器件Fabless方面，上海瞻芯電子于2018年5月成功地在一條成熟量產(chǎn)的6英寸工藝生產(chǎn)線上完成SiCMOSFET的制造流程。代工方面，三安光電旗下的三安集成于2018年12月公布商業(yè)版本的6英寸碳SiC晶圓制造流程，并將其加入到代工組合當(dāng)中。根據(jù)公司新聞稿，目前三安SiC工藝技術(shù)可以為650V、1200V和更高額定電壓的肖特基勢(shì)壘二極管（SBD）提供器件結(jié)構(gòu)，公司預(yù)計(jì)在不久后會(huì)推出針對(duì)900V、1200V和更高額定電壓的SiCMOSFETs產(chǎn)品。
SiC市場(chǎng)：汽車是驅(qū)動(dòng)力
SiC器件正在廣泛地被應(yīng)用在電力電子領(lǐng)域中，典型市場(chǎng)包括軌交、功率因數(shù)校正電源（PFC）、風(fēng)電（wind）、光伏（PV）、新能源汽車（EV/HEV）、充電樁、不間斷電源（UPS）等。根據(jù)Yole的預(yù)測(cè)，2017~2023年，SiC功率器件市場(chǎng)將以每年31%的復(fù)合增長率增長，2023年將超過15億美元；而SiC行業(yè)龍頭Cree則更為樂觀，其預(yù)計(jì)短期到2022年，SiC在電動(dòng)車用市場(chǎng)空間將快速成長到24億美元，是2017年車用SiC整體收入（700萬美元）的342倍。
制造良率提升有利于降低AMOLED屏幕生產(chǎn)成本
隨著AMOLED生產(chǎn)良率提升，AMOLED顯示面板成本有望下降。中國國內(nèi)主流AMOLED面板廠商制造良率已越過60%的盈虧平衡點(diǎn)。中國顯示面板龍頭企業(yè)京東方成都第6代柔性AMOLED生產(chǎn)線良率超85%，維信諾AMOLED生產(chǎn)良率亦超70%。隨著中國廠商AMOLED生產(chǎn)良率提升，AMOLED面板成本將有效下降，廠商毛利有望逐步改善，行業(yè)發(fā)展向好。主流廠商生產(chǎn)良率進(jìn)入65%-90%區(qū)間，成本趨近LCD生產(chǎn)成本區(qū)間，有望迎來訂單與出貨量上升，帶來良性循環(huán)。
SiC是制作高溫、高頻、大功率、高壓器件的理想材料之一，技術(shù)也已經(jīng)趨于成熟，令其成為實(shí)現(xiàn)新能源汽車性能的理想選擇。與傳統(tǒng)解決方案相比，基于SiC的解決方案使系統(tǒng)效率更高、重量更輕及結(jié)構(gòu)更加緊湊。目前SiC器件在EV/HEV上應(yīng)用主要是功率控制單元、逆變器、DC-DC轉(zhuǎn)換器、車載充電器等方面。
新能源車的功率控制單元（PCU）。PCU是汽車電驅(qū)系統(tǒng)的神經(jīng)，管理電池中的電能與電機(jī)之間的流向、傳遞速度。傳統(tǒng)PCU使用硅基材料半導(dǎo)體制成，強(qiáng)電流與高壓電穿過硅制晶體管和二極管的時(shí)的電能損耗是混合動(dòng)力車最主要的電能損耗來源。而使用SiC則大大降低了這一過程中能量損失，將傳統(tǒng)PCU配備的Si二極管置換成SiC二極管，SiIGBT置換成SiCMOSFET，就可以降低10%的總能量損耗，同時(shí)也可以大幅降低器件尺寸，使得車輛更為緊湊。豐田中央研發(fā)實(shí)驗(yàn)室（CRDL）和電裝公司從1980年代就開始合作開發(fā)SiC半導(dǎo)體材料，2014年雙方正式發(fā)布了基于SiC半導(dǎo)體器件的新能源汽車PCU，是這一領(lǐng)域的典型代表。
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