1746-OV32（A-B）
1746-OV32
法國CEA-Leti的研發人員想出了一個更好的主意。他們沒有使用一堆納米線來橋接源極和漏極，而是采用了一堆硅薄片。這個想法是在較小的晶體管中增加溝道的寬度，同時保持對泄漏電流的嚴格控制，從而提供性能更好的低功耗器件。IBM Research在此基礎上更進一步，證明由堆疊納米片（stacked nanosheets）構成的晶體管在同樣的面積上可以提供比FinFET更寬的Weff。
此外，納米片的設計又提供了一個額外的好處：它恢復了從Planar FET向FinFET過渡時喪失的靈活性。既可以讓納米片變寬以增加電流，也可以使其變窄以限制功耗。IBM Research將它們堆疊成三層，大小從8-50 nm不等，并于2017年宣布開發出基于這種納米片結構的5nm芯片。
GAA能否取代FinFET的主導地位？
在這種新型晶體管結構的開發過程中，有各種各樣的名稱出現，比如柵極全環繞型（GAA）、多橋溝道、納米束，以及半導體學術研究界通常叫的“納米片”。叫什么名字不重要，重要的是這種設計不僅僅是邏輯芯片的下一個晶體管結構，它可能是摩爾定律終結前的最后一個。
那么，如何制造納米片呢？制造納米片需要補償層、選擇性化學蝕刻劑，以及先進的原子精確沉積技術。
納米片設計結構插圖：Emily Cooper
基于納米片結構的晶體管又如何構建呢？考慮到大多數半導體制造工藝從硅的頂部垂直向下切割或從裸露的表面垂直向上填充，這似乎是一項艱巨的任務。納米片需要去除其他材料層之間的材料，并用金屬和電介質填充間隙。
其中的關鍵是構建所謂的超晶格--一種由兩種材料組成的周期性分層晶體。它可以是硅和硅鍺，研究人員已經制作出了19層的超晶格，但是所涉及的機械應力以及電容讓我們認識到不應該使用這么多的層。在生長了適當數量的層之后，我們使用一種選擇性腐蝕硅鍺但對硅無作用的化學物質，僅留下硅納米片作為源極和漏極之間的懸浮橋。
1746-OV32
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