ASML防護薄膜產品經理Raymond Maas在接受Bits＆Chips.nl采訪時說：“此次升級支持我們的路線圖，最終將使電源功率高達400瓦。” “在該功率水平下，薄膜被加熱到600?C，而多晶硅則無法承受。” 相比之下，Imec的原型防護膜的透射率為97.7％。實際上，從長遠來看，當可以使用更的光源時，將需要更復雜的防護膜，這就是Imec基于碳納米管的防護膜將發揮作用的地方。
“很少有材料具有超過90％的高EUV透射率的潛力，甚至更少的材料可以同時兼容超過600W的EUV功率。此外，防護膜必須堅固，才能懸掛在大面積的光罩上（? 110mm x 140mm），”來自Imec的研究人員Joost Bekaert說。不幸的是，目前尚不清楚Imec的基于碳納米管的防護膜何時準備就緒。
現在，臺積電（TSMC）和三星（Samsung Foundry）發明了使用EUV光刻工具生產較小芯片的多die掩模，而不需要防護膜的方法，但是這種方法存在風險，因為任何顆粒添加劑都可能成為導致產量下降的缺陷。此外，這樣的方法對于較大的芯片和單die光掩模來說是有風險的，因此，防護膜對于使用EUV工具制造大型die至關重要。也就是說，無論光掩模的尺寸大小如何，都需要使用防護膜來提高EUV產量并降低整個領域的風險。
總體而言，EUV防護膜的使用和改進將是一個循序漸進的過程。由ASML開發和制造的初始防護膜，不久將由三井制造，足以滿足當今的某些需求，但其透射水平仍有改進的空間，這由ASML和Imec的下一代原型證明。由于這些機器將擁有更強大的光源，因此也需要更好的防護膜來應對未來的掃描儀。但是，由于這樣的防護膜具有許多無可爭議的優點，它們將被芯片制造商使用，因為即使以一些生產率為代價，它們也可以幫助提高產量。
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