近年來(lái)，憑借其Twinscan NXE EUV光刻工具取得了長(zhǎng)足進(jìn)步，ASML改善了EUV光刻機(jī)的光源性能，可用性時(shí)間和生產(chǎn)率。其業(yè)界同行也做了很多工作，以使使用EUV設(shè)備的大批量制造（HVM）成為可能。盡管如此，EUV生態(tài)系統(tǒng)仍需要進(jìn)一步發(fā)展。半導(dǎo)體供應(yīng)鏈面臨EUV的最臭名昭著的挑戰(zhàn)之一就是防護(hù)膜（pellicles）的開發(fā)，在兩年前，這種防護(hù)木（pellicles）還沒(méi)有面世，這也就是為什么TSMC和Samsung Foundry必須發(fā)明如何使用沒(méi)有保護(hù)膜的EUV掃描儀的方法。
薄膜（Pellicle）通過(guò)將其與可能落在其表面上的顆粒隔離開，從而在芯片生產(chǎn)流程中保護(hù)6×6英寸光掩模（掩模版），否則在這個(gè)過(guò)程中可能會(huì)損壞它們或在生產(chǎn)中給晶圓造成缺陷。每個(gè)EUV工具的reticle要花費(fèi)30萬(wàn)美元，因此芯片制造商迫切希望能找到新的方法保護(hù)它們的晶圓免受微粒甚至EUV輻射本身的損害，因?yàn)檫@樣可以降低成本。同時(shí)，降低與收益率相關(guān)的風(fēng)險(xiǎn)也許更為重要。
與此同時(shí)，對(duì)薄膜（pellicles）的需求則根據(jù)制造商和所用光掩模的類型而有所不同。英特爾以其大的CPU裸片而聞名，它傾向于使用單裸片，這意味著粒子引入的僅一個(gè)掩模缺陷會(huì)自動(dòng)殺死整個(gè)裸片。同時(shí)，如果使用25個(gè)die的光掩模，粒子加法器將“僅”導(dǎo)致產(chǎn)率降低4％（一個(gè)死die），這就是為什么對(duì)于較小的芯片和多die的光掩模，無(wú)需使用防護(hù)膜（pellicles）即可擺脫困境的原因。
在得知沒(méi)有人能夠保證超復(fù)雜的EUV掃描儀100％不含有害顆粒后，該行業(yè)開始為EUV工具開發(fā)保護(hù)膜，這是相對(duì)較晚的時(shí)間，這就是為什么它們?cè)?019年尚未準(zhǔn)備就緒的原因。
與深紫外線（DUV）光刻設(shè)備一起使用的光掩模膜盒是常見且便宜的。相比之下，由于EUV的光掩模與DUV的光掩模不同（EUV掩模本質(zhì)上是250到350nm厚的堆疊，在基板上具有40到50個(gè)交替的硅和鉬交替層），因此這種標(biāo)線的防護(hù)膜也大不相同。特別是，極紫外光的波長(zhǎng)非常短，這意味著其防護(hù)膜有許多要求，使其不易生產(chǎn)且價(jià)格昂貴。EUV防護(hù)膜必須非常薄，不應(yīng)影響掩模版的反射特性，應(yīng)具有較高的透射率（透射率越高，掃描儀的生產(chǎn)率越高），應(yīng)維持較高的EUV功率水平并承受極端溫度（從600?C至1，000?C的未來(lái)）。
IMEC的Emily Gallagher說(shuō)：“大多數(shù)材料在13.5nm EUV波長(zhǎng)上都具有非常強(qiáng)的吸收能力，即使選擇了大多數(shù)EUV透明材料，其膜也必須非常薄才能達(dá)到90％的透射率。”“這種薄膜通常不能保持足夠的強(qiáng)度，無(wú)法在所需的尺寸下獨(dú)立放置。此外，EUV掃描儀的環(huán)境與許多材料不兼容，會(huì)使防護(hù)膜經(jīng)受抽氣—排氣循環(huán)的作用。”
根據(jù)SemiEngineering的說(shuō)法，迄今為止，已經(jīng)出現(xiàn)了許多EUV防護(hù)膜選項(xiàng)包括：
ASML于2019年推出了EUV防護(hù)薄膜，并將該技術(shù)授權(quán)給三井化學(xué)，該公司計(jì)劃在2021年第二季度開始批量銷售。此后，ASML改進(jìn)了防護(hù)薄膜
Imec已公開了其基于碳納米管的防護(hù)膜的測(cè)試結(jié)果
Graphene Square， Freudenberg Sealing Technologies （FST）和一些大學(xué)正在開發(fā)自己的防護(hù)膜
到目前為止，只有ASML設(shè)法為實(shí)際可用的EUV工具創(chuàng)建了商業(yè)上可行的防護(hù)膜。ASML的防護(hù)膜基于厚度為50 nm的多晶硅。早在2016年，他們就展示了在模擬175W光源上的78％的傳輸率。目前，ASML可以出售透射率達(dá)88％的防護(hù)膜。不久之后，三井將開始大量供應(yīng)此類防護(hù)膜。ASML推出的，由金屬硅化物制成的最新原型展示了90.6％的透射率，0.2％的不均勻性以及在400W光源下反射率小于0.005％的情況。
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